Seminář ÚFE: dr. Nicolas Naudé
12. května 2022
11:00 – 11:50
- posluchárna F1, budova 6, Kotlářská 2
Dielectric Barrier Discharges (DBDs) are studied for decades, but they are still the subject of numerous fundamental and application studies. Indeed, they can be used in many processes such as thin-film coating, sterilization, treatment of gases, aerodynamic flow control, and lighting devices. The plasma operates in the classical filamentary mode or in a homogeneous regime depending on the gas, electrical operation parameters, and discharge geometry. Homogeneous discharges are widely studied at the LAPLACE laboratory because of physics but also because they are interesting for surface modification applications as it allows to transfer the energy to the surface uniformly.
"My presentation will focus on the physics of homogeneous DBDs, i.e. discharges obtained after a Townsend breakdown, with an opening on the plasma processes for surface treatment."
Dr. Nicolas Naudé
University of Toulouse - France, LAPLACE laboratory
Nicolas Naudé received the M.S. degree and the PhD degree in electrical engineering from Toulouse University, France, in 2001 and 2005, respectively. From 2001 to 2006, he worked at the Electrical Engineering Laboratory (Toulouse III University). From 2006 to 2007, he worked at the Processes, Materials and Solar Energy Laboratory (CNRS, Perpignan). Since 2007 he has been an Associate Professor in the Laboratory on Plasma and Conversion of Energy (Toulouse III University). His research interests include high-pressure non-thermal plasma discharge processes and applications, physics of homogeneous dielectric barrier discharges, and interaction between power supply and dielectric barrier discharges. In addition, he has been involved in several research projects aiming to study and develop cold atmospheric pressure plasma processes based on the use of dielectric barrier discharges, with applications to the surface treatment and thin film coating. Since 2016, he is in charge of the activities related to this field.