Seminář ÚFKL: Jan Chochol

Ústav fyziky kondenzovaných látek vás zve na přednášku

Jan Chochol (ON Semiconductor Czech Republic, Rožnov pod Radhoštěm):
Silicon Carbide: a Green-tinted Revolution – Material, devices, applications and challenges in between

Silicon Carbide is a semiconductor material with unique properties which make it suitable for power electronics applications. Simply put, SiC devices (transistors, diodes) are able to operate with lower losses and at higher temperatures than silicon devices. The sought-after properties, permitting this advantage – dielectric breakdown field strength, electron saturation velocity, wide energy band gap, and thermal conductivity are also linked to the challenges encountered in manufacturing SiC devices. Numerous hurdles need to be overcome to manufacture SiC devices, such as crystal growth by sublimation, cutting material with 9.5 rating on Mohs scale and almost no diffusion of dopants. Despite these challenges, the ability of SiC to deliver high performance devices is unparalleled and worth every effort.